2SA1576A_11

2SA1576A Elektronische Bauelemente -0.15A, -60V PNP Silicon Epitaxial Paner Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. A L 3 SOT-323 FEATURES Complements of the 2SC4081 Excellent hFE Linearity 1 3 Top View 2 CB 1 2 K E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1576A-Q 120~270 FQ 2SA1576A-R 180~390 FR 2SA1576A-S 270~560 REF. F G H J FS A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 0.80 1.20 0.20 1.35 1.10 1.40 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 - PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch 0.650 TYP. Collector 3 1 Base 2 Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -60 -50 -6 -150 200 150, -55 ~ 150 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min. -60 -50 -6 120 - Typ. 140 4 Max. 0.1 0.1 560 -0.5 5 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, IE=0, f=1MHz Any changes of specification will not be informed individually. 07-Jan-2011 Rev. C Page 1 of 2 2SA1576A Elektronische Bauelemente -0.15A, -60V PNP Silicon Epitaxial Paner Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Jan-2011 Rev. C Page 2 of 2