2SA1576F

2SA1576F PNP Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor Feature · Complements the 2SC4081F SOT-323 Dim A A Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 B L BS COLLECTOR C D 2 3 3 Top View 1 BASE 1 G H J K V 2 EMITTER 1 2 3 G C D H K J L S V Marking Code: 5AX X = hFE Rank Code All Dimension in mm Absolute Maximum Ratings at Ta = 25 Parameter Junction Temper atur e Stor age Temper atur e C ollector to Bas e Voltage C ollector to Emitter Voltage Emitter to Bas e Voltage C ollector Curr ent Total Pow er Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -60 -50 -6 -150 225 V V V mA mW Unit Characteristics at Ta = 25 Parameter Collector -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Cutoff Current Collector Saturation Voltage 1 DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min -60 -50 -6 120 - Typ. 140 4.0 Max -100 -100 -500 560 5.0 Unit V V V nA nA mV MHz pF Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1 mA VCE=-12V, IE=-2 mA, f=100MHz VCB=-12V, f=1MHz, IE=0 *Pulse Test: Pulse Width = 380us, Duty Cycle = 2% Classification of hFE Rank Q R S Range 120 - 270 180 - 390 270 - 560 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SA1576F PNP Silicon Elektronische Bauelemente General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SA1576F PNP Silicon Elektronische Bauelemente General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3