2SA1586

2SA1586 Elektronische Bauelemente -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     High DC Current Gain High Voltage and High Current Complementary to 2SC4116 Small Package 1 SOT-323 A 3 3 L Top View 2 CB 1 2 APPLICATIONS  General Purpose Amplification K E D F G H J CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1586-O 70~140 SO 2SA1586-Y 120~240 SY 2SA1586-GR(G) 200~400 SG REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch  Base Collector   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -50 -50 -5 -150 100 1250 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min. -50 -50 -5 70 80 - Typ. - Max. -100 -100 400 -0.3 7 Unit V V V A A Test Conditions IC = -100A, IE = 0 IC = -1mA, IB = 0 IE = -100A, IC = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -6V, IC = -2mA V MHz pF IC = -100mA, IB = -10mA VCE = -10V, IC = -1mA VCB = -10V, IE = 0, f = 1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Jan-2011 Rev. A Page 1 of 1