2SA1774

2SA1774 Elektronische Bauelemente RoHS Compliant Product PNP Silicon General Purpose Transistor FEATURES A L 3 Top View SOT-523 Dim A Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50 Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70 · · Low Cob. Cob=4.0pF Compements the 2SC4617 S 2 B 1 B C D STRUCTURE D G G H C J K · · Expitaxial planar type PNP Silicon Teansistor H 3 Collector Base 2 1 Emitter J K L S All Dimension in mm !Absolute maximum (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits -60 -50 -6 -0.15 Unit V V V A Collector power dissipation PC 0.15 W °C °C Junction temperature Storage temperature Tj Tstg 150 −55~+150 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. -60 -50 -7 − − 120 − − − Typ. − − − − − − − 140 4.0 Max. − − − -0.1 -0.1 560 -0.5 − 5.0 Unit V V V µA µA − V MHz pF IC=-50µA IC=-1uA IE=-50µA VCB=-60V VEB=-6V Conditions VCE=-6V, IC=-1mA IC/IB=-50mA/-5mA VCE=-12V, IE=−2mA, f=30MHz VCE=-12V, IE=0A, f=1MHz Output capacitance hFE values are classified as follows : Item hFE Q 120~270 R 180~390 S 270~560 Marking FQ FR FS Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Page 1 of 2 2SA1774 Elektronische Bauelemente PNP Silicon General Purpose Transistor !Electrical characteristic curves −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 COLLECTOR CURRENT : IC (mA) Ta=100˚C 25˚C −40˚C VCE=−6V −10 −35.0 Ta=25˚C −100 −31.5 Ta=25˚C −500 −450 −400 −350 −300 −8 −28.0 −80 −24.5 −6 −21.0 −60 −250 −17.5 −4 −200 −14.0 −40 −150 −10.5 −2 −7.0 −3.5µA −100 −20 −50µA −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 IB=0 0 −1 −2 −3 −4 −5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25˚C VCE=−5V −3V −1V DC CURRENT GAIN : hFE 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100˚C 25˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 −40˚C 200 100 −0.2 IC/IB=50 100 −0.1 20 10 50 50 VCE=−6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 20 Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 200 5 −0.1 Ta=100˚C 25˚C −40˚C 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2