2SA1774_10

2SA1774 Elektronische Bauelemente -0.15A, -60V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low COB. COB=4.0pF Complements the 2SC4617 A M 3 SOT-523 3 CLASSIFICATION OF hFE 1 Top View 2 CB 1 2 Product-Rank Range Marking 2SA1774-Q 120~270 FQ 2SA1774-R 180~390 FR 2SA1774-S 270~560 FS K E L D F REF. G Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 H REF. G H J K L M J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 PACKAGE INFORMATION Package SOT-523 MPQ 3K LeaderSize 7’ inch A B C D E F Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -60 -50 -6 -150 150 150, -55 ~ 150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * DC current gain Transition frequency Collector output capacitance * Pulse Test :Pulse Width ≤300us,D.C ≤ 2% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. -60 -50 -6 120 - Typ. 140 3.5 Max. -0.1 -0.1 -0.5 -1.2 560 5.0 Unit V V V μA μA V V Test Conditions IC=-50μA, IE=0 IC=-1μA, IB=0 IE=-50μA, IC=0 VCB=-60V, IE=0 VEB= -6V, IC=0 IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-3V, IC=-1mA MHz pF VCE=-12V, IE=-2mA, f=30MHz VCB=-12V, IE=0, f=1MHz 31-Dec-2010 Rev. B Page 1 of 2 2SA1774 Elektronische Bauelemente -0.15A, -60V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 2 of 2