2SA1797

2SA1797 Elektronische Bauelemente PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High transition frequency High power dissipation PACKAGE DIMENSIONS SOT-89 A C D 1 2 3 1. Base 2. Collector 3. Emitter Millimeter Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. M REF. REF. G H I J K L M E B I H G A B C D E F F J K L MARKING : AGX X = hFE Rank Code ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -50 -6 -2 0.5 150, -55~150 Unit V V V A W °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Typical Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB Min. -50 -50 -6 82 - Typ. Max. -0.1 -0.1 270 -0.35 - Unit V V V μA μA V MHz pF Test Conditions IC=-50μA, IE=0 IC= -1mA, IB=0 IE=-50μA, IC=0 VCB=-50V, IE=0 VEB=-5 V, IC=0 VCE=-2V, IC= -500mA IC=-1A, IB= -50mA VCE=-2V, IC=-500mA, f = 100MHz VCB=-10V, IE=0, f=1MHz 200 36 CLASSIFICATION OF hFE2 Rank Range P 82 - 180 Q 120 - 270 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 1 of 2 2SA1797 Elektronische Bauelemente PNP General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 2 of 2