2SA1797_09

2SA1797 Elektronische Bauelemente PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES High transition frequency High power dissipation A 4 1 2 3 C PACKAGE DIMENSIONS B 1 2 3 E D F G H J K L 1. Base 2. Collector 3. Emitter REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 MARKING : AGX X = hFE Rank Code ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -50 -6 -2 0.5 150, -55~150 Unit V V V A W °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Typical Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB Min. -50 -50 -6 82 - Typ. Max. -0.1 -0.1 270 -0.35 - Unit V V V µA µA V MHz pF Test Conditions IC=-50µA, IE=0 IC= -1mA, IB=0 IE=-50µA, IC=0 VCB=-50V, IE=0 VEB=-5 V, IC=0 VCE=-2V, IC= -500mA IC=-1A, IB= -50mA VCE=-2V, IC=-500mA, f = 100MHz VCB=-10V, IE=0, f=1MHz 200 36 CLASSIFICATION OF hFE2 Rank Range P 82 - 180 Q 120 - 270 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Oct-2009 Rev. C Page 1 of 2 2SA1797 Elektronische Bauelemente PNP General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Oct-2009 Rev. C Page 2 of 2