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2SA608N

2SA608N

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SA608N - PNP Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SA608N 数据手册
2SA608N Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -0.1 A, -40 V PNP Plastic Encapsulated Transistor FEATURES  TO-92 Large current capacity and wide ASO. G H APPLICATIONS  Capable of being used in the low frequency to high frequency range. A J D B K Emitter Collector Base CLASSIFICATION OF hFE Product-Rank 2SA608N-F 2SA608N-G Range 160~320 280~560 REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -60 -50 -6 -0.15 500 250 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Min -60 -50 -6 160 70 - Typ 200 4.5 Max -0.1 -0.1 560 -0.3 -1 - Unit V V V μA μA Test condition IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -40V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA VCE= -6V, IC= -0.1mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -6V, IC= -10mA VCB= -6V, IC= 0, f=1MHz V V MHz pF Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 1 of 1
2SA608N 价格&库存

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