2SA608N
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-0.1 A, -40 V PNP Plastic Encapsulated Transistor
FEATURES
TO-92
Large current capacity and wide ASO.
G H
APPLICATIONS
Capable of being used in the low frequency to high frequency range.
A
J D B K
Emitter Collector Base
CLASSIFICATION OF hFE
Product-Rank 2SA608N-F 2SA608N-G Range 160~320 280~560
REF. A B C D E F G H J K
E
C
F
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
-60 -50 -6 -0.15 500 250 150, -55~150
Unit
V V V A mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
Min
-60 -50 -6 160 70 -
Typ
200 4.5
Max
-0.1 -0.1 560 -0.3 -1 -
Unit
V V V μA μA
Test condition
IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -40V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA VCE= -6V, IC= -0.1mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -6V, IC= -10mA VCB= -6V, IC= 0, f=1MHz
V V MHz pF
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
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