2SA673_11

2SA673, 2SA673A Elektronische Bauelemente PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A G H TO-92 1Emitter 2Collector 3Base J A D B REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 CLASSIFICATION OF hFE(1) Product-Rank Product-Rank Range 2SA673-B 2SA673A-B 60~120 2SA673-C 2SA673A-C 100~200 2SA673-D 2SA673A-D 160~320 E K C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature 2SA673 2SA673A 2SA673 2SA673A Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating -35 -50 -35 -50 -4 -500 400 150, -55~150 Unit V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown 2SA673 Voltage 2SA673A Collector to Emitter Breakdown Voltage Collector Cut - Off Current DC Current Gain Collector to Emitter Saturation Voltage 2SA673 2SA673A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE (1) hFE (2) * VCE(sat) * Min. -35 -50 -35 -50 -4 60 10 - Typ. -0.64 Max. -0.5 320 -0.6 - Unit V V V µA Test Conditions IC= -10µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -20V, IE=0 VCE= -3V, IC=- 10mA VCE= -3V, IC= -500mA Emitter to Base Breakdown Voltage V V IC = -150mA, IB= -15mA VCE= -3V, IC= -10mA Collector to Emitter Voltage VBE * Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. C Page 1 of 2 2SA673, 2SA673A Elektronische Bauelemente PNP General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. C Page 2 of 2