2SA684_11

2SA684 Elektronische Bauelemente -1A , -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Automatic insertion by radial taping possible. Complementary pair with 2SC1384L. G H TO-92L 1Emitter 2Collector 3Base J A D CLASSIFICATION OF hFE Product-Rank Range 2SA684-Q 85~170 2SA684-R 120~240 2SA684-S 170~340 K B REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -60 -50 -5 -1 1 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE (1) hFE (2) VCE(sat) VBE(sat) fT COb Min. -60 -50 -5 85 50 - Typ. - Max. -0.1 340 Unit V V V µA Test Conditions IC= -10µA, IE=0 IC= -2mA, IB=0 IE= -10µA, IC=0 VCB= -20V, IE=0 VCE= -10V, IC= -500mA VCE= -5V, IC= -1A -0.2 -0.85 200 20 -0.4 -1.2 30 V V MHz pF IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE= -10V, IE=50mA , f=200MHz VCB= -10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 1 of 3 2SA684 Elektronische Bauelemente -1A , -60V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 2 of 3 2SA684 Elektronische Bauelemente -1A , -60V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 3 of 3