2SA720
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-0.5 A, -60 V PNP Plastic Encapsulated Transistor
FEATURES
TO-92
For low-frequency power amplification and driver amplification.
G H
CLASSIFICATION OF hFE
Product-Rank 2SA720-Q Range 85~170 2SA720-R 120~240 2SA720-S 170~340
K A
J D B
Emitter Collector Base
REF. A B C D E F G H J K
E
C
F
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Rating
-60 -50 -5 -0.5 625 150, -55~150
Unit
V V V A mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
Min
-60 -50 -5 85 40 -
Typ
200 -
Max
-0.1 -0.1 340 -0.6 -1.5 15
Unit
V V V μA μA
Test condition
IC= -10μA, IE=0 IC= -10mA, IB=0 IE= -10μA, IC=0 VCB= -20V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -0.15A VCE= -10V, IC= -0.5A IC= -0.3A, IB= -30mA IC= -0.3A, IB= -30mA VCE= -10V, IC= -50mA, f=200MHz VCB= -10V, IE= 0, f=1MHz
V V MHz pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 1 of 3
2SA720
Elektronische Bauelemente -0.5 A, -60 V PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 2 of 3
2SA720
Elektronische Bauelemente -0.5 A, -60 V PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 3 of 3
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