2SA821

2SA821 Elektronische Bauelemente -0.03A , -210 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 G H High Breakdown Voltage Low Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SA821-N Range 56~120 2SA821-P 82~180 2SA821-Q 82~180 K J A B D Emitter Collector Base Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -210 -210 -5 -30 250 500 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min -210 -210 -5 56 - Typ 50 8 Max -1 -1 270 -0.6 - Unit V V V μA μA V MHz pF Test condition IC= -0.05mA, IE=0 IC= -0.1mA, IB=0 IE= -0.05mA, IC=0 VCB= -150V, IE=0 VEB= -4.5V, IC=0 VCE= -3V, IC= -5mA IC= -2mA, IB= -0.2mA VCE= -5V, IC= -2mA VCB= -10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Feb-2011 Rev. A Page 1 of 1