2SA844
Elektronische Bauelemente -0.1A , -55V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High DC Current Gain Low Frequency Amplifier
CLASSIFICATION OF hFE
Product-Rank Range 2SA844-C 160~320 2SA844-D 250~500 2SA844-E 400~800
K
J A B D
Emitter Collector Base
REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
-55 -55 -5 -100 300 416 150, -55~150
Unit
V V V mA mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob
Min
-55 -55 -5 160 -
Typ
200 2
Max
-0.1 -0.05 800 -0.5 -0.75 -
Unit
V V V μA μA V V MHz pF
Test condition
IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -18V, IE=0 VEB= -2V, IC=0 VCE= -12V, IC= -2mA IC= -10mA, IB= -1mA VCE= -12V, IC= -2mA VCE= -12V, IC= -2mA VCE= -10V, IC=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 1 of 1
很抱歉,暂时无法提供与“2SA844”相匹配的价格&库存,您可以联系我们找货
免费人工找货