2SA844

2SA844

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SA844 - PNP Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SA844 数据手册
2SA844 Elektronische Bauelemente -0.1A , -55V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 G H High DC Current Gain Low Frequency Amplifier CLASSIFICATION OF hFE Product-Rank Range 2SA844-C 160~320 2SA844-D 250~500 2SA844-E 400~800 K J A B D Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -55 -55 -5 -100 300 416 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Min -55 -55 -5 160 - Typ 200 2 Max -0.1 -0.05 800 -0.5 -0.75 - Unit V V V μA μA V V MHz pF Test condition IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -18V, IE=0 VEB= -2V, IC=0 VCE= -12V, IC= -2mA IC= -10mA, IB= -1mA VCE= -12V, IC= -2mA VCE= -12V, IC= -2mA VCE= -10V, IC=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Feb-2011 Rev. A Page 1 of 1
2SA844 价格&库存

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