2SB1068

2SB1068 Elektronische Bauelemente -2A , -20V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     TO-92 G H Low Collector Saturation Voltage High DC Current Gain High Collector Power Dissipation Complementary of the 2SD1513 J A B K D Emitter Collector Base Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K CLASSIFICATION OF hFE (1) Product-Rank Range 2SB1068-L 135~270 2SB1068-K 200~400 2SB1068-U 300~650 E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -20 -16 -6 -2 0.625 200 150, -55~150 Unit V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) VBE Ccb fT Min -20 -16 -6 135 100 -0.55 100 Typ 60 - Max -0.1 -0.1 650 -0.4 -0.5 -0.5 -1.2 -0.65 - Unit V V V μA μA Test condition IC= -0.1mA, IE=0 IC= -1mA, IB=0 IE= -0.1mA, IC=0 VCB= -16V, IE=0 VEB= -6V, IC=0 VCE= -2V, IC= -0.1A VCE= -2V, IC= -1.5A V V V V V pF MHz IC= -1A, IB= -10mA IC= -1.5A, IB= -20mA IC= -1.5A, IB= -75mA IC= -1.5A, IB= -75mA VCE= -6V, IC= -5mA VCB= -10V, IE=0, f=1MHz VCE= -10V, IC = -50mA Any changes of specification will not be informed individually. Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter voltage Collector-Base Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A Page 1 of 1