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2SB1116A

2SB1116A

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SB1116A - PNP Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SB1116A 数据手册
2SB1116A Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H TO-92 CLASSIFICATION OF hFE(1) Product-Rank Range 2SB1116A-L 135~270 2SB1116A-K 200~400 2SB1116A-U 300~600 K A 1Emitter 2Collector 3Base J D REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 B E C F A B C D E F G H J K Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating -80 -60 -6 -1 0.75 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter voltage Collector-Base Capacitance Transition Frequency Turn-on time Storage time Fall time http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) VBE Ccb fT TON TS TF Min. -80 -60 -6 135 81 -0.6 70 - Typ. 25 0.07 0.7 0.07 Max. -0.1 -0.1 600 -0.3 -1.2 -0.7 - Unit V V V µA µA Test Conditions IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -100µA, IC=0 VCB= -80V, IE=0 VEB= -6V, IC=0 VCE= -2V, IC= -0.1A VCE= -2V, IC= -1A V V V pF MHz us IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCE= -2V, IC= -0.05A VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -0.1A VCC= -10V, IC= -0.1A, IB1= -IB2= -0.01A VBE(off) = 2 ~ 3V Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 1 of 2 2SB1116A Elektronische Bauelemente -1 A, -80 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 2 of 2
2SB1116A 价格&库存

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