2SB1119

2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES Power dissipation P CM : 500mW Tamb=25 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJ Tstg: -55 to +150 b1 b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified CLASSIFICATION OF hFE(1) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE 1 Test conditions IE=0 MIN -25 -25 -5 TYP MAX UNIT V V V Ic=-10 A IC= -1 mA , IB=0 IE= -10 A IC=0 IE=0 VCB= -20 V , -0.1 -0.1 -0.1 100 40 -0.7 -1.2 180 25 A A A VCE= -20 V , IB=0 VEB=-4V , IC=0 VCE= -2V, IC= -50mA VCE=-2V, IC= -1A IC=-0.5A, IC=-0.5A, VCE= -10V, IB= -50mA IB= -50mA IC=-50mA 560 DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency 2 VCE(sat) VBE(sat) fT V V MHz pF Collector output capacitance Marking 2SB1119 : 2SD1619 : BB DB Cob VCB=-10V, f = 1MH CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com R 100-200 S 140-280 T 200-400 U 280-560 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SB1119/2SD1619 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristic curves http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SB1119/2SD1619 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristic curves http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3