2SB1132

2SB1132 Elektronische Bauelemente PNP Silicon Medium Power Transistor SOT-89 D Dimensions In Millimeters Dimensions In Inches Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 1.BASE 2.COLLECTOR 3.EMITTER E1 D1 A Symbol A b b1 c Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 E D D1 E E1 b1 *Features Low power dissipation 0.5W RoHS Compliant Product b L e e1 C e e1 L 3.100 1.100 0.114 0.035 0.122 0.043 *Stucture Epitaxial planar type. PNP silicon transistor. ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test unless otherwise specified conditions MIN TYP MAX UNIT V V V Ic=-50 A,IE=0 Ic=-1mA,IB=0 IE=-50 A,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-100mA IC=-500mA,IB=-50mA VCE=-5V,IC=-50mA,f=30MHz VCB=-10V,IE=0,f=1MHz -40 -32 -5 -0.5 -0.5 82 390 -0.5 150 20 30 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range P 82-180 Q 120-270 R 180-390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SB1132 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical Characteristic Curves http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SB1132 Elektronische Bauelemente PNP silicon Medium Power Transistor Electrical Characteristic Curves http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3