2SB1188

2SB1188 Elektronische Bauelemente -2A, -40V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. SOT-89 4 1 2 FEATURES Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B 3 C A E D F G H K J L CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1188-P 82~180 BCP 2SB1188-Q 120~270 BCQ 2SB1188-R 180~390 BCR REF. A B C D E F PACKAGE INFORMATION Package SOT-89 MPQ 1K LeaderSize 7’ inch Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 1.2 0.89 0 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings -40 -32 -5 -2 Unit V V V A W °C 0.5 (2.0*) 150, -55~150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min. -40 -32 -5 - Typ. -500 150 50 Max. -1 -1 -800 390- Unit V V V μA μA mV MHz pF Test Conditions IC=-50µA , IE=0 IC= -1mA, IB=0 IE= -50µA, IC=0 VCB= -20V, IE=0 VEB= -4V, IC=0 IC=--2A, IB= -200mA VCE= -3V, IC= -500mA VCE= -5V, IC= -500mA, f=30MHz VCB= -10V, IE=0, f=1MHz VCE(sat) hFE fT COB 82 - Pulse Test: Pulse Width ≦ 380µs, Duty Cycle≦2% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. D Page 1 of 2 2SB1188 Elektronische Bauelemente -2A, -40V PNP Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. D Page 2 of 2