0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SB1197K

2SB1197K

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SB1197K - Low Frequency Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SB1197K 数据手册
2SB1197K Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free - 32V, - 0.8A Low Frequency Transistor 3. C ollector FEATURES . Low V C 2. B as e CE(sat). VCE(sat) 0.5V (IC / IB = - 0.5A / - 50mA) 1.E mitter . I = - 0.8A. . Complements the 2SD1781K. . Epitaxial planar type . PNP silicon transistor L S 2 A SC-59 Dim A B C D D Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 3 Top View B 1 MECHANICAL DATA G H C J K G . Case: SC-59, Molded Plastic . Terminals: Solderable per MIL-STD-202, Method 208 J K L S . Polarity: See Diagrams Below . Weight: 0.008 grams (approx.) . Mounting Position: Any H All Dimension in mm ABSOLUTE MAXIMUM RATINGS Rating 25 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ TSTG LIMITS - 40 - 32 -5 - 0.8 0.2 150 -55 ~ +150 UNIT V V V A W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SB1197K Elektronische Bauelemente - 32V, - 0.8A Low Frequency Transistor ELECTRICAL CHARACTERISTICS (Ta = 25 TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. - 40 - 32 -5 120 50 - ) Typ. 200 12 Max. - 0.5 - 0.5 - 0.5 390 30 UNIT V V V µA µA V MHz pF TEST CONDITIONS IC = 50µA IC = 1mA IE = 50µA VCB = 20V VEB = 4V IC / IB = 0.5A / 50mA VCE = 3V, IC = 100mA VCE = 5V, IE = 50mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz hFE VALUES ARE CLASSIFIED AS FOLLOWS: ITEM hFE Marking Q 120 ~ 270 AHQ R 180 ~ 390 AHR ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SB1197K Elektronische Bauelemente - 32V, - 0.8A Low Frequency Transistor http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3
2SB1197K 价格&库存

很抱歉,暂时无法提供与“2SB1197K”相匹配的价格&库存,您可以联系我们找货

免费人工找货
2SB1197KT146R
    •  国内价格
    • 1+0.21749
    • 30+0.20919
    • 100+0.20089
    • 500+0.18429
    • 1000+0.17598
    • 2000+0.171

    库存:0