2SB1197K_10

2SB1197K Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A A L 3 SC-59 3 MECHANICAL DATA Case: SC-59, Weight: 0.008 grams(approx.) 1 Top View 2 CB 1 2 K E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197K-Q 120~270 AHQ 2SB1197K-R 180~390 AHR REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 0.35 2.30 0.50 F G H J REF. G H J K L PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -40 -32 -5 -800 200 +150, -55 ~ +150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT COB Min. -40 -32 -5 120 50 - Typ. 200 12 Max. -0.5 -0.5 -0.5 390 30 Unit V V V μA μA V Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-20V VEB= -4V IC=-500mA, IB=-50mA VCE=-3V, IC=-100mA MHz pF VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. C Page 1 of 2 2SB1197K Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. C Page 2 of 2