2SB1197_10

2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View CB 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197-P 82~180 AHP 2SB1197-Q 120~270 AHQ 2SB1197-R 180~390 AHR F K 1 E D G H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -40 -32 -5 -800 200 +150, -55 ~ +150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT COB Min. -40 -32 -5 82 50 - Typ. 200 12 Max. -0.5 -0.5 -0.5 390 30 Unit V V V μA μA V Test Conditions IC=-50μA, IE = 0 IC=-1mA, IB = 0 IE=-50μA, IC = 0 VCB=-20V, IE = 0 VEB= -4V, IC = 0 IC=-500mA, IB=-50mA VCE=-3V, IC=-100mA MHz pF VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. C Page 1 of 2 2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. C Page 2 of 2