2SB1198K

2SB1198K PNP Silicon Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 Top View General Purpose Transistor SC-59 Dim A B C D D Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 S FEATURES 2 B 1 G H C J K G Power dissipation : 0.2 W PCM Collector current ICM : -0.5 A * Collector-base voltage V V(BR)CBO : -80 Operating and storage junction temperature range TJ Tstg: -55 to +150 J K L S H 3 2 1 All Dimension in mm COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test unless otherwise specified conditions MIN TYP MAX UNIT V V V Ic=-50 A,IE=0 Ic=-2mA,IB=0 IE=-50 A,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-100mA IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA VCB=-10V,IE=0,f=1MHz -80 -80 -5 -0.5 -0.5 120 390 -0.5 180 11 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Q 120-270 R 180-390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SB1198K Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves 01-Jun-2002 Rev. A Page 2 of 2