2SB1218A

2SB1218A Elektronische Bauelemente -0.1A , -60V PNP Silicon Epitaxial Paner Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS  General Purpose Amplification A L 3 SOT-323 FEATURES   3 High DC Current Gain Complementary to 2SD1819A K Top View 1 2 CB 1 2 E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1218A-Q 160~260 BQ1 2SB1218A-R 210~340 BR1 2SB1218A-S 290~460 BS1 REF. A B C D E F G Millimeter Min. Max. 1.80 2.20 1.80 1.15 0.80 1.20 0.20 2.45 1.35 1.10 1.40 0.40 H J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 - PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch 0.650 TYP. F Collector   Base  Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -45 -45 -7 -100 150 833 150, -55 ~ 150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) fT Cob Min. -45 -45 -7 160 - Typ. 80 2.7 Max. -100 -100 -100 460 -0.5 - Unit V V V nA μA nA V MHz pF Test Conditions IC= -10μA, IE=0 IC= -2mA, IB=0 IE= -10μA, IC=0 VCB= -20V, IE=0 VEB= -10V, IB=0 VEB= -5V, IC=0 VCE= -10V, IC= -2mA IC= -100mA, IB= -10mA VCE= -10V, IE=1mA, f=200MHz VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. 14-Feb-2011 Rev. A Page 1 of 1