2SB1260

2SB1260 Elektronische Bauelemente -1 A, -80 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 A E SOT-89 4 1 BC 3 E C 2 PACKAGE INFORMATION Weight: 0.05 g (approximately) Collector B F G H J REF. Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 D K L REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 24 MARKING ZL 1 Base 3 Emitter A B C D E F ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -80 -80 -5 -1 0.5 150, -55~150 Unit V V V A W °C PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB Min. -80 -80 -5 82 - Typ. 100 25 Max. -1 -1 390 -0.4 - Unit V V V μA μA V MHz pF Test Conditions IC=-50μA, IE=0 IC= -1mA, IB=0 IE=-50μA, IC=0 VCB=-60V, IE=0 VEB=-4 V, IC=0 VCE=-3V, IC= -100mA IC=-500mA, IB= -50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE2 Rank Range Q 82 - 180 R 120 - 270 S 180 - 390 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-July-2007 Rev. A Page 1 of 2 2SB1260 Elektronische Bauelemente -1 A, -80 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES -1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta=25 C VCE=-5V -1.0 Ta=25 C -0.45mA 1000 500 DC CURRENT GAIN : hFE Ta=25 C -100 -0.8 -0.6 -0.4mA -0.35mA -0.3mA -0.25mA -0.2mA -0.15mA -0.1mA 200 100 50 VCE=-3V -1V -10 -0.4 -0.2 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) -0.05mA IB=0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 20 10 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) Ta=25 C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25 C VCE=-5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Ta=25 C f=1MHz IE=0A IC/IB=20 10 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) Ta=25 C f=1MHz IC=0A -2 IC Max. (Pulse) -1 IC Max. -0.5 Ta=25 C Single nonrepetitive pulse * PW 200 100 50 0m =1 s =1 PW 00 m DC s -0.2 -0.1 -0.05 -0.5 -1 -2 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -5 -10 -20 -50 -100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig. 7 Emitter input capacitance vs. emitter-base voltage Fig. 8 Safe operating area (2SB1260) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-July-2007 Rev. A Page 2 of 2