2SB1386

2SB1386 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Low Frequency Transistor Features 1)Low VCE(sat). 2)Excellent DC current gain characteristics 3)Complements the 2SD2098 3.EMITTER SOT-89 1.BASE D 2.COLLECTOR D1 A ° Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −30 −20 −6 −5 −10 0.5 Collector power dissipation PC 2 Junction temperature Storage temperature Tj Tstg 150 −55~+150 W ∗2 E1 b1 Unit V b C V V A(DC) A(Pulse) ∗1 W L e e1 Symbol A b b1 c D D1 E E1 Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min E Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 °C °C e e1 L ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ° Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. −30 −20 −6 − − − 82 − − Typ. − − − − − − − 120 60 Max. − − − −0.5 −0.5 −1.0 390 − − Unit V V V µA µA V − MHz pF IC=−50µA IC=−1mA IE=−50µA VCB=−20V VEB=−5V Conditions VCE(sat) hFE fT Cob IC/IB=−4A/−0.1A VCE=−2V, IC=−0.5A VCE=−6V, IE=50mA, f=30MHz VCB=−20V, IE=0A, f=1MHz ∗ ∗ Output capacitance ∗Measured using pulse current. Rank hFE P 82~180 Q 120~270 R 180~390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SB1386 Elektronische Bauelemente PNP Silicon Low Frequency Transistor -10 -5 COLLECTOR CURRENT : IC (A) VCE=−2V COLLECTOR CURRENT : IC (A) -5 DC CURRENT GAIN : hFE -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 Ta=100°C 25°C −25°C -4 −50mA −45mA −40mA −35mA Ta=25°C mA −30 A −25m −20mA 5k 2k 1k 500 200 100 50 20 10 5 Ta=25°C −15mA -3 −10mA VCE=−5V -2 −5mA −2V −1V -1 IB=0A 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE (V) 0 -0.4 -0.8 -1.2 -1.6 -2.0 -1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current (Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k 2k DC CURRENT GAIN : hFE VCE=−1V DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 5 VCE=−2V -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ta=25°C 1k 500 200 100 50 20 10 5 -1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 Ta=100°C 25°C −25°C Ta=100°C 25°C −25°C IC/IB=50/1 40/1 /1 30/1 10/1 -1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current (ΙΙ) Fig.5 DC current gain vs. collector current (ΙΙΙ) Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 lC/lB=40 −25°C Ta=100°C 25°C 25°C Ta=100°C 25°C −25°C −25°C Ta=100°C -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙΙ) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SB1386 Elektroni sche Bauelemente PNP Silicon Low Frequency Transistor COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSEITION FREQUENCY : fT (MHz) lC/lB=50 −25°C 25°C Ta=100°C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25°C VCE=−6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 1 000 1000 500 Ta=25°C f=1MHz IE=0A 200 100 50 20 10 -0.1 -0.2 -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 50 100 200 500 1000 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector-emitter saturation voltage vs. collector current (V) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) 1000 500 Ta=25°C f=1MHz IC=0A 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Emitter input capacitance vs. emitter-base voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. 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