2SB1386_10

2SB1386 Elektronische Bauelemente -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 A E SOT-89 4 1 2 3 C CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1386-P 82~180 BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR B F G H D K J L PACKAGE INFORMATION Package SOT-89 MPQ 1K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 1.2 0.89 0 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Symbol VCBO VCEO VEBO IC PD Ratings -30 -20 -6 -5 -10 Unit V V V A(DC) A(Pulse) (1) W (2) °C 0.5 2 150, -55~150 Junction & Storage Temperature TJ, TSTG Note: (1) Single pulse, Pw=10ms. (2) When mounted on a 40⋅40⋅0.7 mm ceramic board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain * Transition frequency Output Capacitance ∗Measured using pulse current. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min. -30 -20 -6 - Typ. 120 60 Max. -0.5 -0.5 -1.0 390 - Unit V V V μA μA V MHz pF Test Conditions IC=-50µA IC= -1mA IE= -50µA VCB= -20V VEB= -5V IC/IB= -4A/-0.1A VCE= -2V, IC= -0.5A VCE= -6V, IE= -50mA, f=30MHz VCB= -20V, IE=0, f=1MHz VCE(sat) hFE fT COB 82 - * * http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. B Page 1 of 3 2SB1386 Elektronische Bauelemente -5A, -30V PNP Silicon Low Frequency Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. B Page 2 of 3 2SB1386 Elektronische Bauelemente -5A, -30V PNP Silicon Low Frequency Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. B Page 3 of 3