2SB1412

2SB1412 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Low Frequency Transistor Features 1)Low VCE(sat). 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 0.2 0.1 D-Pack 2.3 0.5 0.1 0.1 !Absolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO IC −30 −20 −6 −5 −10 0.5 2 PC 1 10 2SB1326 Junction temperature Storage temperature Tj Tstg 1 150 −55~+150 V V V 0.2 2.5 A(Pulse) ∗1 W W W W(TC=25°C) W ∗3 ∗2 0.7 0.8 0.1 1.0 0.3 A(DC) 5.6 7.0 0.2 0.2 Parameter Symbol Limits Unit 1.2 1.5Max 0.3 2SB1386 Collector power dissipation 2SB1412 0.3 0.1 0.6 2.3 0.1 °C °C ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1386,2SB1412 2SB1326 hFE fT Cob Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. −30 −20 −6 − − − 82 120 − − Typ. − − − − − − − − 120 60 Max. − − − −0.5 −0.5 −1.0 390 390 − − Unit V V V µA µA V − − MHz pF IC=−50µA IC=−1mA IE=−50µA VCB=−20V VEB=−5V IC/IB=−4A/−0.1A VCE=−2V, IC=−0.5A VCE=−6V, IE=50mA, f=30MHz VCB=−20V, IE=0A, f=1MHz Conditions VCE(sat) ∗ ∗ ∗ Transition frequency Output capacitance ∗Measured using pulse current. !Packaging specifications and hFE Package Code Type 2SB1386 2SB1412 2SB1326 hFE PQR PQR QR − − − Basic ordering unit (pieces) T100 1000 Taping TL 2500 − TV2 2500 − − http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SB1412 Elektronische Bauelemente PNP Silicon Low Frequency Transistor !Electrical characteristic curves COLLECTOR CURRENT : IC (A) -10 VCE=−2V -5 COLLECTOR CURRENT : IC (A) -5 DC CURRENT GAIN : hFE -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 Ta=100°C 25°C −25°C -4 −50mA −45mA −40mA −35mA Ta=25°C mA −30 A −25m −20mA −15mA 5k 2k 1k 500 200 100 50 20 10 5 Ta=25°C -3 −10mA VCE=−5V -2 −5mA −2V −1V -1 IB=0A 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE (V) 0 -0.4 -0.8 -1.2 -1.6 -2.0 -1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current (Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k 2k DC CURRENT GAIN : hFE VCE=−1V DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 5 VCE=−2V -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ta=25°C 1k 500 200 100 50 20 10 5 -1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 Ta=100°C 25°C −25°C Ta=100°C 25°C −25°C IC/IB=50/1 40/1 /1 30/1 10/1 -1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current (ΙΙ) Fig.5 DC current gain vs. collector current (ΙΙΙ) Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 lC/lB=40 −25°C 25°C Ta=100°C 25°C Ta=100°C 25°C −25°C −25°C Ta=100°C -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙΙ) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SB1412 Elek troni sche Bauelemente PNP Silicon Low Frequency Transistor COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSEITION FREQUENCY : fT (MHz) lC/lB=50 −25°C 25°C Ta=100°C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25°C VCE=−6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 1 000 1000 500 Ta=25°C f=1MHz IE=0A 200 100 50 20 10 -0.1 -0.2 -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 50 100 200 500 1000 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector-emitter saturation voltage vs. collector current (V) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IC=0A 100 50 20 10 Ta=25°C ∗Single nonrepetitive pulse Pw 200 100 50 5 2 1 500m 200m 100m 50m 20m 10m Pw =1 DC 0 =1 ms ms 00 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area (2SB1412) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. 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