2SB561
Elektronische Bauelemente -0.7A , -25V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
Low Frequency Power Amplifier
Emitter Collector Base
J A D
REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
CLASSIFICATION OF hFE
Product-Rank Range 2SB561-B 85~170 2SB561-C 120~240
K
B
E
C
F
A B C D E F G H J K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
-25 -20 -5 -0.7 0.5 250 150, -55~150
Unit
V V V A W °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Collector Output Capacitance Transition Frequency
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
*
Min
-25 -20 -5 85 -
Typ
20 350
Max
-1 -1 240 -0.5 -1 -
Unit
V V V μA μA V V pF MHz
Test condition
IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -20V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -0.15A IC= -0.5A, IB= -0.05A VCE= -1V, IC= -0.15A VCB = -10V, IE=0, f=1MHz VCE = -1V, IC = -0.15A
VCE(sat) VBE Ccb fT
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
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