2SB562

2SB562 Elektronische Bauelemente 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier Complementary pair with 2SD468 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -25 -20 -5 -1 0.9 +150, -55 ~ +150 Unit V V V A W ℃ ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE hFE(1) fT Cob Min. -25 -20 -5 85 - Typ. - Max. -1 -1 Unit V V V μA μA V V IC=-10 μA, IE = 0 IC=-1 mA, IB = 0 IE=-10 μA, IC = 0 VCB=-20 V, IE = 0 VEB=-4 V, IC = 0 Test Conditions 350 38 -0.5 -1 240 - IC=-0.8A, IB=-0.08A VCE=-2V, IC=-0.5A VCE=-2V, IC=-0.5A MHz pF VCE = -2V, IC = -0.5 A VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE(1) Rank Range B 85 -170 C 120 - 240 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 3 2SB562 Elektronische Bauelemente 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 3 2SB562 Elektronische Bauelemente 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 3 of 3