2SB624

2SB624 Elektronische Bauelemente -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   SOT-23 A L 3 3 High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA) Complimentary to 2SD596 MARKING 1 Top View CB 1 2 2 Product-Rank Range Product-Rank Range 2SB624-BV1 110~180 2SB624-BV4 200~320 2SB624-BV2 135~220 2SB624-BV5 250~400 2SB624-BV3 170~270 K E D F REF. A B C D E F G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch Collector    Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -30 -25 -5 -700 200 150, -55~150 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1)* hFE (2)* VCE(sat) * VBE fT Cob * Min. -30 -25 -5 110 50 -0.6 - Typ. 160 17 Max. -0.1 -0.1 400 -0.6 -0.7 - Unit V V V A A Test Conditions IC= -100A, IE=0 IC= -1mA, IB=0 IE= -100A, IC=0 VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA V V MHz pF IC= -700mA, IB= -70mA VCE= -6V, IC= -10mA VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz *Pulse test：Pulse width ≦ 350 s, Duty Cycle ≦ 2%. Any changes of specification will not be informed individually. 15-Feb-2011 Rev. A Page 1 of 2 2SB624 Elektronische Bauelemente -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Feb-2011 Rev. A Page 2 of 2