2SB709A

Elektronische Bauelemente RoHS Compliant Product PNP Silicon General Purpose Transistor SOT-23 Dim A B A L BS 2SB709A A suffix of "-C" specifies halogen & lead-free FEATURES l Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Power Dissipation PCM : 0.2 W (Tamb = 25 oC) 3 C D G 2 Collector 1 Top View G H J K L 3 V 1 Base Emitter 2 C o S K J MAXIMUM RATINGS* (TA=25 C ) Symbol VCBO VCEO VEBO IC TJ Tstg Parameter D H V All Dimension in mm Value -45 -45 -7 -200 -55~150 -55~150 Unit V V V mA o o Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature C C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 oC unless other wise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Cob Test conditions MIN -45 -45 -7 -0.1 -100 160 460 -0.5 60 2.7 V MHz pF MAX UNIT V V V µA µA IC=-10 µA, IE=0 Ic=-2 mA,IB=0 IE=-10 µ A,IC=0 VCB=-20V,IE =0 VCE=-10V,IB =0 VCE=-10V, IC=-2mA IC=-100mA,IB=-10mA VCE=-10V, IC=-1mA, f=200MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE Rank Range Marking http://www.SeCoSGmbH.com Q 160-260 BQ1 R 210-340 BR1 S 290-460 BS1 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SB709A Elektronische Bauelemente PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 Elektronische Bauelemente PNP Silicon General Purpose Transistor 2SB709A * http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3