2SB709A_11

2SB709A Elektronische Bauelemente -0.2A , -45V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES For general amplification Complementary of the 2SD601A A L 3 SOT-23 3 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB709A-Q 160~260 BQ1 2SB709A-R 210~340 BR1 2SB709A-S 290~460 BS1 F 1 Top View 2 CB 1 2 K E D G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -45 -45 -7 -100 200 150, -55 ~ 150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO VCE(sat) hFE fT Cob Min. -45 -45 -7 160 60 - Typ. - Max. -0.1 -100 -0.5 460 2.7 Unit V V V μA μA V Test Conditions IC= -10μA, IE=0 IC= -2mA, IB=0 IE= -10μA, IC=0 VCB= -20V, IE=0 VCE= -10V, IB=0 IC= -100mA, IB= -10mA VCE= -10V, IC= -2mA MHz pF VCE= -10V, IC= -1mA, f=200MHz VCB= -10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 1 of 3 2SB709A Elektronische Bauelemente -0.2A , -45V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 2 of 3 2SB709A Elektronische Bauelemente -0.2A , -45V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jan-2011 Rev. B Page 3 of 3