2SB764L

2SB764L Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free PNP Plastic Encapsulated Transistor FEATURE ● ● ● ● Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, TSTG: -55℃ to +150℃ A J D Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 TO-92L G H 1Emitter 2Collector 3Base Collector 2 REF. B K 3 PACKAGING INFORMATION Weight: 0.3900 g (Approximate) Base E C F 1 Emitter A B C D E F G H J K ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT COB Min. -60 -50 -5 60 30 - Typ. 150 20 Max. -1 -1 320 -0.7 -1.2 - Unit V V V μA μA Test Conditions IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -2V, IC = -0.05A VCE = -2V, IC = -1A V V MHz pF IC = -0.5A, IB = -0.05A IC = -0.5A, IB = -0.05A VCE = -10V, IC = -0.05A VCB = -10V, IE = 0, f = 1 MHz CLASSIFICATION OF hFE(1) Rank Range D 60 - 120 E 100 - 200 F 160 - 320 01-April-2009 Rev. A Page 1 of 3 2SB764L Elektronische Bauelemente PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES 2SB764L 01-April-2009 Rev. A Page 2 of 3 2SB764L Elektronische Bauelemente PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES 2SB764L 01-April-2009 Rev. A Page 3 of 3