2SB766

2SB766 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES Power dissipation P CM : 500mW Tamb=25 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -30 Operating and storage junction temperature range TJ Tstg: -55 to +150 b1 b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) unlessotherwise Test conditions specified MIN TYP MAX UNIT V V V Ic=-10 A, IE=0 Ic=-2mA, IB=0 IE=-10 A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA VCE=-5V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA, f=200MHz VCB=-10V, IE=0, f=1MHz -30 -25 -5 -0.1 -0.1 85 50 -0.2 -0.85 A A 340 DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) -0.4 -1.2 V V MHz fT Cob 200 20 30 pF CLASSIFICATION OF hFE(1) Rank Range Marking Q 85-170 AQ R 120-240 AR S 170-340 AS http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SB766 Elektronische Bauelemente PNP Silicon Medium Power Transistor PC ⎯ Ta 1.4 −1.50 IC ⎯ VCE Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA VCE(sat) ⎯ IC Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness −1.25 Collector current IC (A) −10 −1.00 − 0.75 −1 Ta = 75°C 25°C −25°C − 0.50 − 0.1 − 0.25 0 20 40 60 80 100 120 140 160 0 0 −2 −4 −6 −8 −10 − 0.01 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) ⎯ IC −100 hFE ⎯ IC 600 VCE = −10 V 200 VCB = −10 V Ta = 25°C fT ⎯ I E Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 Forward current transfer ratio hFE Transition frequency fT (MHz) −1 −10 500 −10 160 400 Ta = 75°C 300 25°C 200 −25°C 25°C −1 120 Ta = −25°C 75°C 80 − 0.1 100 40 − 0.01 − 0.01 − 0.1 −1 −10 0 − 0.01 − 0.1 0 1 10 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob ⎯ VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 50 IE = 0 f = 1 MHz Ta = 25°C −10 Safe operation area Single pulse Ta = 25°C ICP 40 Collector current IC (A) −1 IC t=1s t = 10 ms 30 − 0.1 20 − 0.01 10 0 −1 −10 −100 − 0.001 − 0.01 − 0.1 −1 −10 Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2