2SC1008
Elektronische Bauelemente 0.7A , 80 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
General Purpose Switching and Amplification.
J
Emitter Base Collector
D
REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
CLASSIFICATION OF hFE
Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G Range 40~80 70~140 120~240 200~400
K
A B
E
C
F
A B C D E F G H J K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
80 60 8 0.7 800 156 150, -55~150
Unit
V V V A mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob
Min
80 60 8 40 30 -
Typ
8
Max
0.1 0.1 400 0.4 1.1 -
Unit
V V V μA μA V V MHz pF
Test condition
IC=0.1mA, IE=0 IC=10mA, IB=0 IE=0.01mA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IC=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 1 of 1
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