2SC1162

2SC1162 Elektronische Bauelemente 2.5A , 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE (1) Product-Rank Range 2SC1162-B 60~120 2SC1162-C 100~200 2SC1162-D A 160~320 E F B C L K N M J H D Collector G  REF.  Base  Emitter A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 35 35 5 2.5 750 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance *Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) fT VBE Min. 35 35 5 60 20 - Typ. 180 - Max. 20 20 320 1 1.5 Unit V V V μA μA Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A* IC=2A, IB=200mA VCE=2V, IC=200mA VCE=2V, IC=1.5A V MHz V http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Mar-2011 Rev. A Page 1 of 2 2SC1162 Elektronische Bauelemente 2.5A , 35V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Mar-2011 Rev. A Page 2 of 2