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2SC1213

2SC1213

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SC1213 - NPN Silicon General Purpose Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SC1213 数据手册
2SC1213 & 2SC1213A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon General Purpose Transistor FEATURE Low frequency amplifier TO-92 Power dissipation PCM: 0.4 W (Tamb=25℃) 2 3 Collector current ICM: 0.5 A 35 50 V V 1 1 2 3 Collector-base voltage V(BR)CBO: 2SC1213 : 2SC1213A : -55℃ to +150℃ 1. Emitter 2. Collector 3. Base Operating and storage junction temperature range TJ, Tstg: ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage 2SC1213 2SC1213A Collector-emitter breakdown voltage 2SC1213 2SC1213A Emitter-base breakdown voltage Collector cut-off current Sym bol V(BR)CBO Test conditions MIN 35 50 35 50 4 0.5 60 10 0.2 0.6 0.75 V V 320 TYP MAX UNIT V Ic= 10µA , IE=0 V(BR)CEO V(BR)EBO ICBO hFE(1) IC= 1 mA , IB=0 IE=10µA, IC=0 VCB= 20V , IE=0 VCE=3V, IC= 10mA VCE=3V, IC= 500mA IC= 150mA, IB= 15 mA VCE= 3V, IC= 10 mA V V µA DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE CLASSIFICATION OF hFE(1) Rank Range B 60-120 C 100-200 D 160-320 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SC1213 & 2SC1213A Elektronische Bauelemente PNP Silicon General Purpose Transistor Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) 100 Typical Output Characteristics (1) 1.0 0.9 0.8 80 0.7 0.6 0.5 P C 400 = 60 40 0 m W 40 0.4 0.3 200 20 0.2 0.1 mA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 6 8 10 2 4 Collector to Emitter Voltage VCE (V) 500 Collector Current IC (mA) 400 Collector Current IC (mA) 300 Typical Output Characteristics (2) 10 9 8 7 6 5 4 3 2 Typical Transfer Characteristics 30 VCE = 3 V 10 200 1 mA PC = 400 mW IB = 0 0 6 8 10 2 4 Collector to Emitter Voltage VCE (V) 1.0 100 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 140 DC Current Transfer Ratio hFE 120 100 80 60 40 20 0 VCE = 3 V Ta = 25°C 2 5 10 20 50 100 200 Collector Current IC (mA) 500 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A 25 –25 3 Ta = 75°C Page 2 of 2
2SC1213 价格&库存

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