2SC1383L_11

2SC1383L / 2SC1384L Elektronische Bauelemente NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. G H TO-92L J A D 1Emitter 2Collector 3Base REF. Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 CLASSIFICATION OF hFE(1) Product-Rank Product-Rank Range 2SC1383L-Q 2SC1384L-Q 85~170 2SC1383L-R 2SC1384L-R 120~240 2SC1383L-S B 2SC1384L-S 170~340 K E C F A B C D E F G H J K Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature 2SC1383L 2SC1384L 2SC1383L 2SC1384L Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 30 60 25 50 5 1 1 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown 2SC1383L Voltage 2SC1384L Collector to Emitter Breakdown Voltage Collector Cut - Off Current DC Current Gain Collector to Emitter Saturation Voltage Base – Emitter Saturation Voltage Transition Frequency 2SC1383L 2SC1384L Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE (1) hFE (2) VCE(sat) VBE(sat) fT Min. 30 60 25 50 5 85 50 - Typ. 200 Max. 0.1 340 0.4 1.2 - Unit V V V µA Test Conditions IC=10µA, IE=0 IC=2mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=500mA VCE=5V, IC=1A Emitter to Base Breakdown Voltage V V MHz IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Jan-2011 Rev. B Page 1 of 2 2SC1383L / 2SC1384L Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Jan-2011 Rev. B Page 2 of 2