2SC1623

2SC1623 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free 150 mA, 60 V NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS A L S 3 Top View SC-59 Dim A Min 2.70 1.30 1.00 0.35 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 0.10 0.26 0.60 1.65 3.00 2 1 B B C D D G C H COLLECTOR BASE EMITTER G H J K 1.90 REF. J K L S All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pd TJ, TSTG Ratings 60 50 5 150 250 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat)1 *hFE1 *hFE2 *hFE3 fT Cob Min. 60 50 5 90 25 80 80 - Typ. - Max. 100 100 250 1.0 600 3.5 Unit V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V Test Conditions IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=1V, IC=10mA MHz pF VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank Range P 90 - 180 Y 135 - 270 G 200 - 400 B 300 - 600 01-June-2002 Rev. A Page 1 of 2 2SC1623 Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2