2SC1906

2SC1906 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.05 A , 30 V NPN Plastic Encapsulated Transistor FEATURES  High Transition Frequency APPLICATIONS  VHF Amplifier  Mixer, Local Oscillator TO-92 G H Emitter Collector Base D J A B K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 30 19 2 50 300 416 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min. 30 19 2 40 600 - Typ. - Max. 0.5 0.5 1 2 Unit V V V μA μA V MHz pF Test Conditions IC=0.01mA, IE=0 IC=3mA, IB=0 IE=0.01A, IC=0 VCB=10V, IE=0 VEB=2V, IC=0 VCE=10V, IC=10mA IC=20mA, IB=4mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Feb-2011 Rev. A Page 1 of 1