2SC1923
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
0.02 A , 40 V NPN Plastic Encapsulated Transistor
FEATURES General Purpose Switching and Amplification
TO-92
G H
J A D B K
Emitter Collector Base
CLASSIFICATION OF hFE
Product-Rank Range 2SC1923-R 40~80 2SC1923-O 70~140 2SC1923-Y 100~200
E
REF. A B C D E F G H J K
C
F
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
40 30 4 20 100 1250 150, -55~150
Unit
V V V mA mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Transition Frequency
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT
Min.
40 30 4 40 -
Typ.
550
Max.
0.5 0.5 200 -
Unit
V V V μA μA MHz
Test Conditions
IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=18V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. A
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