2SC1959

2SC1959 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.5 A , 35 V NPN Plastic Encapsulated Transistor FEATURES  Excellent hFE Linearity  High Transition Frequency TO-92 G H J A D B Emitter Collector Base CLASSIFICATION OF hFE Product-Rank hFE(1) Range hFE(2) 2SC1959-O 70~140 25Min 2SC1959-Y 120~240 40Min 2SC1959-GR 200~400 E K REF. A B C D E F G H J K C F - Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 35 30 5 500 500 250 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Collector Output Capacitance Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE Cob fT Min. 35 30 5 70 25 - Typ. 7 300 Max. 0.1 0.1 400 0.25 1 - Unit V V V μA μA Test Conditions IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA V V pF MHz IC=100mA, IB=10mA VCE=1V, IC=100mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=20mA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Feb-2011 Rev. A Page 1 of 1