2SC2120_11

2SC2120 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.8 A , 35 V NPN Plastic Encapsulated Transistor FEATURES High DC Current Gain Complementary to 2SA950 G H TO-92 CLASSIFICATION OF hFE Product-Rank Range 2SC2120-O 100~200 2SC2120-Y 160~320 K J A B D 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 35 30 5 0.8 0.6 208 150, -55~150 Unit V V V A W ° /W C ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Collector Output Capacitance Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE Cob fT Min. 35 30 5 100 100 Typ. - Max. 0.1 0.1 0.1 320 0.5 0.8 13 - Unit V V V µA µA µA V V pF MHz Test Conditions IC=0.1mA, IE=0 IC=10mA, IB=0 IE=0.1mA, IC=0 VCB=35V, IE=0 VCE=25V, IB=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=20mA VCE=1V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Jan-2011 Rev. B Page 1 of 2 2SC2120 Elektronische Bauelemente 0.8 A , 35 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Jan-2011 Rev. B Page 2 of 2