2SC2216

2SC2216 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.05 A , 50 V NPN Plastic Encapsulated Transistor FEATURES  Amplifier dissipation NPN Silicon TO-92 G H Base Emitter Collector D J A B K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 50 45 4 50 300 125, -55~125 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min. 50 45 4 40 300 - Typ. - Max. 0.1 0.1 140 0.2 1.5 2 Unit V V V μA μA V V MHz pF Test Conditions IC=100μA, IE=0 IC=10mA, IB=0 IE=100μA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCE=12.5V, IC=12.5mA VCB=10V, IE=0, f=30MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Feb-2011 Rev. A Page 1 of 2 2SC2216 Elektronische Bauelemente 0.05 A , 50 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Feb-2011 Rev. A Page 2 of 2