2SC2274
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
0.5 A , 60 V NPN Plastic Encapsulated Transistor
FEATURES High Breakdown Voltage High Current Low Saturation Voltage
TO-92
G H
J A D B
Emitter Collector Base
CLASSIFICATION OF hFE(1)
Product-Rank Range 2SC2274-D 60~120 2SC2274-E 100~200 2SC2274-F 160~320
E K
REF. A B C D E F G H J K
C
F
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
60 50 5 0.5 600 208 150, -55~150
Unit
V V V A mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2)
*
Min.
60 50 5 60 35 -
Typ.
120 5
Max.
1 1 320 0.6 1.2 -
Unit
V V V μA μA
Test Conditions
IC=0.01mA, IE=0 IC=1mA, IB=0 IE=0.01mA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=400mA
VCE(sat) VBE(sat) fT Cob
V V MHz pF
IC=400mA, IB=40mA IC=400mA, IB=40mA VCE=10V, IC=10mA VCB=10V, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Feb-2011 Rev. A
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