2SC2712
Elektronische Bauelemente
NPN Silicon General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES
*Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C *RoHS Compliant Product
o 1 3
3 Collector
Base
Dim A B
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
1
2
Emitter
C D G
A
L BS
H J K L S V
C
2
Top View G
V
All Dimension in mm
K J
D
H
ELECTRICAL CHARACTERISTICS (Tamb=25oC
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Em itter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Noise Figure Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF
unless otherwise specified)
Test conditions MI N 60 50 5 0.1 0.1 70 0.1 80 2.0 1.0 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V µA µA
Ic= 100µA , IE=0 IC=1mA , IB=0 IE= 100µA, IC=0 VCB= 60 V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC= 100m A, IB=10mA VCE=10V, IC= 1m A VCB=10V, IE=0,f=1 MHz VCE=6V,IC=0.1mA,f=1kHz, Rg=10kΩ
CLASSIFICATION OF hFE
Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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