2SC2712

2SC2712 Elektronische Bauelemente NPN Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES *Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C *RoHS Compliant Product o 1 3 3 Collector Base Dim A B Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1 2 Emitter C D G A L BS H J K L S V C 2 Top View G V All Dimension in mm K J D H ELECTRICAL CHARACTERISTICS (Tamb=25oC Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Em itter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Noise Figure Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF unless otherwise specified) Test conditions MI N 60 50 5 0.1 0.1 70 0.1 80 2.0 1.0 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V µA µA Ic= 100µA , IE=0 IC=1mA , IB=0 IE= 100µA, IC=0 VCB= 60 V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC= 100m A, IB=10mA VCE=10V, IC= 1m A VCB=10V, IE=0,f=1 MHz VCE=6V,IC=0.1mA,f=1kHz, Rg=10kΩ CLASSIFICATION OF hFE Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 1