2SC2714

2SC2714 Elektronische Bauelemente 0.02A , 40V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   SOT-23 A 3 3 Small reverse Transfer Capacitance：Cre=0.7pF(typ.) Low Noise Figure：NF=2.5dB(typ.)(f=100MHz) L Top View CB 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SC2714-R 40~80 QR 2SC2714-O 70~140 QO 2SC2714-Y 100~200 QY F K 1 E D G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. G H J K L Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 40 30 4 20 100 125, -55~125 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Transition Frequency Reverse Transfer Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT Cre NF Min. 40 30 4 40 - Typ. 550 0.7 2.5 Max. 0.5 0.5 200 5 Unit V V V μA μA MHz pF dB Test Condition IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=18V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA, f=100MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 1 of 3 2SC2714 Elektronische Bauelemente 0.02A , 40V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 2 of 3 2SC2714 Elektronische Bauelemente 0.02A , 40V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 3 of 3