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2SC2715

2SC2715

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SC2715 - NPN Plastic-Encapsulate Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SC2715 数据手册
2SC2715 Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   SOT-23 A 3 3 High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. 1 L Top View CB 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SC2715-R 40~80 RR1 2SC2715-O 70~140 RO1 2SC2715-Y 120~240 RY1 K E D F G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 35 30 4 50 350 150, -55~150 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Power Gain http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Gpe Min. 35 30 4 40 100 27 Typ. - Max. 0.1 0.1 240 0.4 1 400 33 Unit V V V μA μA V V MHz dB Test Condition IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=6V, IC=1mA, f=10.7MHz Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 1 of 4 2SC2715 Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 2 of 4 2SC2715 Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 3 of 4 2SC2715 Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Mar-2011 Rev. A Page 4 of 4
2SC2715 价格&库存

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