2SC3199
Elektronische Bauelemente 0.15 A , 50 V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High Current Capability High DC Current Gain Small Package
J
Emitter Collector Base
D
REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
APPLICATIONS
A B K
Audio Amplifier Applications AM Amplifier Applications
CLASSIFICATION OF hFE
Product-Rank Range 2SC3199-O 70~140 2SC3199-Y 120~240 2SC3199-GR 200~400 2SC3199-BL 300~700
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC RθJA TJ, TSTG
Rating
50 50 5 150 400 312 150, -55~150
Unit
V V V mA mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Collector Output Capacitance Transition Frequency
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT
Min.
50 50 5 70 80
Typ.
-
Max.
0.1 0.1 700 0.25 3.5 -
Unit
V V V μA μA V pF MHz
Test Condition
IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=1mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
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