2SC3279

2SC3279 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Transistor Plastic-Encapsulate Transistors TO-92 FEATURES High DC current gain and excellent hFE linearity Low saturation voltage 4.55±0.2 3 . 5 ±0.2 4.5±0.2 (1. 27 Typ. ) 1.25–0.2 123 2.54 ±0.1 +0.2 14.3 ±0. 2 0.46 +0. 1 –0.1 08 0.4 3 +0. 07 –0. 1: Emitter 2: Collector 3: Base MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Value 30 10 6 2 750 150, -55~150 Units V V V A mW °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Test Conditions IC = 1mA, IE = 0 IC = 10mA, IB = 0 IE = 1mA, IC = 0 Min 30 10 6 Typ Max Units V V V Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector Power Dissipation Transition Frequency ICBO IEBO hFE VCE(sat) VBE Cob fT VCB = 30V, IE = 0 VEB = 6V, IC = 0 VCE = 1V, IC = 0.5A IC = 2A, IB = 100mA IC = 2A, VCE = 1V VCB = 10V, IE = 0, f = 1MHz VCE = 1V, IC = 0.5A 0 .1 0 .1 140 600 0.82 1.5 27 150 A A V V pF MHz CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A L 140-240 M 200-330 N 300-450 P 420-600 Any changing of specification will not be informed individual Page 1 of 2 2SC3279 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2